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| PTF 10160 85 Watts, 860-960 MHz GOLDMOS (R) Field Effect Transistor Description The PTF 10160 is an internally matched 85-watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability. * * INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power = 85 Watts - Power Gain = 16 dB Typ - Efficiency = 53% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability * * * * Typical Output Power& Efficiency vs. Input Power 120 100 70 60 Efficiency 80 60 40 20 Output Power 0 0 1 2 3 4 5 Output Power (Watts) 40 Efficiency (%) 50 VDD = 26 V IDQ = 700 mA f = 960 MHz 30 20 10 0 1234 5600 55A 1016 0 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 700 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gpe P-1dB h Y Min 15 85 50 -- Typ 16 90 53 -- Max -- -- -- 5:1 Units dB Watts % -- e 1 PTF 10160 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 3.0 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 205 1.18 -40 to +150 0.85 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 18 17 16 Output Power (W) 110 20 60 Efficiency (%) 50 40 100 90 Output Power & Efficiency 16 Gain (dB) Gain Gain 15 14 13 12 11 10 860 880 900 920 940 Gain (dB) VDD = 26 V IDQ = 700 mA POUT = 85 W 8 -15 10 Return Loss 4 860 865 870 875 880 885 890 895 -20 0 900 0 30 -20 5 80 70 60 50 960 IDQ = 700 mA Efficiency (%) Frequency (MHz) Frequency (MHz) 2 Return Loss (dB) VDD = 26.0 V 12 Efficiency (%) Broadband Test Fixture Performance e Return Loss (dB) Efficiency (%) PTF 10160 Power Gain vs. Output Power 17 IDQ = 700 mA 60 Efficiency (%) 50 40 -30 5 20 -15 Return Loss 10 -25 0 -35 960 Broadband Test Fixture Performance 20 Gain (dB) Gain VDD = 26 V IDQ = 700 mA POUT = 85 W Power Gain (dB) 16 16 IDQ = = 400 m IDQ 350 mA 12 15 8 14 IDQ = 175 mA VDD = 28 V f = 960 MHz 1 10 100 1000 4 920 13 925 930 935 940 945 950 955 Frequency (MHz) Output Power (Watts) Output Power vs. Supply Voltage 100 Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) -10 Output Power (Watts) 90 VDD = 26 V, IDQ = 700 mA -20 80 f1 = 960 MHz, f2 = 960.1 MHz 3rd Order IMD (dBc) 70 60 50 40 22 24 26 28 30 32 -30 -40 -50 -60 0 20 40 60 80 100 5th 7th IDQ = 700 mA f = 960 MHz Supply Voltage (Volts) Output Power (Watts-PEP) Capacitance vs. Voltage * 300 250 25 Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0 40 0.86 2.5 4.16 5.8 7.42 9.06 Cds and Cgs (pF) VGS = 0 V f = 1 MHz 20 15 10 5 Voltage normalized to 1.0 V Series show current (A) 150 100 50 0 0 10 20 30 Cds Crss Supply Voltage (Volts) Crss (pF) 200 Cgs 0.96 -20 30 Temp. (C) 80 130 * This part is internally matched. Measurements of the finished product will not yield these figures. 3 PTF 10160 Spectrum Due to Modulation (Edge Modulation) e Without correction circuit 200 kHz = -36 dBc 400 kHz = -57 dBc 600 kHz = -70 dBc 4 e Impedance Data VDD = 26 V, POUT = 85 W, IDQ = 700 mA D PTF 10160 Z Source Z Load Z0 = 50 W G S Frequency MHz 860 880 900 920 940 960 R Z Source W jX -1.5 -1.6 -1.7 -1.7 -1.5 1.5 R 2.6 2.6 2.6 2.4 2.3 2.2 2.1 2.6 3 4.1 6.3 7.1 Z Load W jX 1.1 1.3 1.5 1.5 1.65 1.8 Test Circuit Test Circuit Schematic for f = 921 to 960 MHz DUT l1, l9 l2 l3 l4 l5 l6 l7 l8 l1, l9 PTF 10160 0.037 l 0.120 l 0.080 l 0.187 l 0.204 l 0.250 l 0.031 l 0.157 l 0.037 l LDMOS Transistor Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 9.29 W Microstrip 6.98 W Microstrip 77.9 W Microstrip 50 W Microstrip 50 W Microstrip 50 W C1, C3, C4, C8 C2 C5 Digi-Key C6 Digi-Key C7 J1, J2 R1, R2, R3 Circuit Board 100 B Capacitor, 36 pF 100 B Capacitor, 2.7 pF P4525-ND Capacitor, 0.1 F, 50 V P5182-ND Capacitor, 100 F, 50 V ATC 100 B Capacitor, 3.3 pF SMA Panel Mount Female Connector 220 W Resistor, Digi-Key 1K QBK .031" Thickness, e = 4.0, r AlliedSignal, G200, 2 oz. copper 5 PTF 10160 e 10160 Components Layout (not to scale) ERICSSON 10160_A OUTPUT Artwork (not to scale) 6 e Case Outline Specifications Package 20248 PTF 10160 Primary dimensions are inches; alternate dimensions are mm. Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1999, 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 10160 Uen Rev. A 12-03-00 7 |
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